Volume 9, Issue 1 (International Journal of Optics and Photonics (IJOP) Vol 9, No 1, Winter-Spring 2015)                   IJOP 2015, 9(1): 53-61 | Back to browse issues page

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Behjat A, Dehghani M, Tajabadi F, Taghavinia N. Optimization of Annealing Process for Totally Printable High-current Superstrate CuInS2 Thin-Film Solar Cells. IJOP. 2015; 9 (1) :53-61
URL: http://ijop.ir/article-1-195-en.html
Yazd University
Abstract:   (1785 Views)
Planar superstrate CuInS2 (CIS) solar cell devices are fabricated using totally solution-processed deposition methods. A titanium dioxide blocking layer and an In2S3 buffer layer are deposited by the spray pyrolysis method. A CIS2 absorber layer is deposited by the spin coating method using CIS ink prepared by a 1-butylamine solvent-based solution at room temperature. To obtain optimum annealing temperature, these layers are first annealed at 150°C and then annealed at 210°C, 250°C and 350°C respectively. The optimum annealing temperature of the layer is found to be 250°C, where 23 mA current density and 505 mV open circuit voltage are measured for the best fabricated solar cell sample.
Full-Text [PDF 655 kb]   (828 Downloads)    
Type of Study: Research | Subject: Special
Received: 2014/12/7 | Revised: 2015/06/2 | Accepted: 2015/05/3 | Published: 2015/06/2

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