دوره ۹، شماره ۱ - ( ۱۰-۱۳۹۳ )
جلد ۹ شماره ۱ صفحات ۶۱-۵۳ |
برگشت به فهرست نسخه ها
Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
Behjat A, Dehghani M, Tajabadi F, Taghavinia N. Optimization of Annealing Process for Totally Printable High-current Superstrate CuInS2 Thin-Film Solar Cells. IJOP 2015; 9 (1) :53-61
URL: http://ijop.ir/article-1-195-fa.html
URL: http://ijop.ir/article-1-195-fa.html
Optimization of Annealing Process for Totally Printable High-current Superstrate CuInS۲ Thin-Film Solar Cells. . ۱۳۹۳; ۹ (۱) :۵۳-۶۱
چکیده: (۷۰۷۶ مشاهده)
Planar superstrate CuInS2 (CIS) solar cell devices are fabricated using totally solution-processed deposition methods. A titanium dioxide blocking layer and an In2S3 buffer layer are deposited by the spray pyrolysis method. A CIS2 absorber layer is deposited by the spin coating method using CIS ink prepared by a 1-butylamine solvent-based solution at room temperature. To obtain optimum annealing temperature, these layers are first annealed at 150°C and then annealed at 210°C, 250°C and 350°C respectively. The optimum annealing temperature of the layer is found to be 250°C, where 23 mA current density and 505 mV open circuit voltage are measured for the best fabricated solar cell sample.
نوع مطالعه: پژوهشي |
موضوع مقاله:
تخصصي
دریافت: 1393/9/16 | ویرایش نهایی: 1394/3/12 | پذیرش: 1394/2/13 | انتشار: 1394/3/12
دریافت: 1393/9/16 | ویرایش نهایی: 1394/3/12 | پذیرش: 1394/2/13 | انتشار: 1394/3/12
| بازنشر اطلاعات | |
 |
این مقاله تحت شرایط Creative Commons Attribution-NonCommercial 4.0 International License قابل بازنشر است. |
