Volume 4, Issue 2 (International Journal of Optics and Photonics (IJOP) Vol 4, No. 2, Summer-Fall 2010)                   IJOP 2010, 4(2): 69-76 | Back to browse issues page

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Gaur A, Sharma D, Gaur P, Malik B, Singh N. Photoexcited Carrier Lifetime and Refractive Nonlinearity in Direct and Indirect Band Gap Crystals on the Z-Scan Technique. IJOP 2010; 4 (2) :69-76
URL: http://ijop.ir/article-1-207-en.html
1- Department of Physics, Hindu P.G. College, Sonipat, India
2- Department of Physics, B.M. Institute of Engineering and Technology, Sonipat, India
3- Department of Physics, T.C.M. College of Engineering, Sonipat, India.
4- Department of Physics, Deenbandhu Chhotu Ram University of Science and Technology, Murthal, (D.C.R.U.S.T) Sonipat, India
5- Laser Systems Engineering Division (L.S.E.D.), Raja Ramanna Centre for Advanced Technology (CAT), Indore, India
Abstract:   (5498 Views)
The Photoexcited carrier lifetime (τ) and peak to valley transmission difference (ΔTp-v) in direct and indirect band gap crystals has been investigated by the use of single beam open and closed aperture z-scan technique using frequency doubled Nd:YAG laser. The peak to valley transmission difference (ΔTp-v) is found to be of the order of 10-2 in case of direct band gap crystals and of the order of 10-3 in case of indirect band gap crystals. The carrier life time (τ) is found to be in nanoseconds range in case of direct band gap crystals and picoseconds range in case of indirect band gap crystals. Lower value of (τ) and (ΔTp-v) in case of indirect band gap crystals can be attributed to the reduction in the value of carrier density (N) and small value of nonlinear phase shift ( Δϕ ),respectively.
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Type of Study: Research | Subject: General
Received: 2015/03/10 | Revised: 2015/03/10 | Accepted: 2015/03/10 | Published: 2015/03/10

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