Volume 9, Issue 1 (International Journal of Optics and Photonics (IJOP) Vol 9, No 1, Winter-Spring 2015)
IJOP 2015, 9(1): 53-61 |
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1- Yazd University
2- Nanotechnology and Advanced Materials Department, Materials and Energy Research Center
3- Sharif University of Technology
2- Nanotechnology and Advanced Materials Department, Materials and Energy Research Center
3- Sharif University of Technology
Abstract: (6555 Views)
Planar superstrate CuInS2 (CIS) solar cell devices are fabricated using totally solution-processed deposition methods. A titanium dioxide blocking layer and an In2S3 buffer layer are deposited by the spray pyrolysis method. A CIS2 absorber layer is deposited by the spin coating method using CIS ink prepared by a 1-butylamine solvent-based solution at room temperature. To obtain optimum annealing temperature, these layers are first annealed at 150°C and then annealed at 210°C, 250°C and 350°C respectively. The optimum annealing temperature of the layer is found to be 250°C, where 23 mA current density and 505 mV open circuit voltage are measured for the best fabricated solar cell sample.
Keywords: CuInS2, Thin film solar cells, Superstrate structure, Solution-processed deposition method
Type of Study: Research |
Subject:
Special
Received: 2014/12/7 | Revised: 2015/06/2 | Accepted: 2015/05/3 | Published: 2015/06/2
Received: 2014/12/7 | Revised: 2015/06/2 | Accepted: 2015/05/3 | Published: 2015/06/2
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