Volume 9, Issue 1 (International Journal of Optics and Photonics (IJOP) Vol 9, No 1, Winter-Spring 2015)                   IJOP 2015, 9(1): 9-17 | Back to browse issues page

XML Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Masoudian Saadabad R, Hatefi-Kargan N. The Effect of Structural Parameters on the Electronic States and Oscillator Strength of a Resonant Tunneling Quantum Well Infrared Photodetector. IJOP. 2015; 9 (1) :9-17
URL: http://ijop.ir/article-1-188-en.html
PhD Department of Physics, University of Sistan and Baluchestan, Zahedan, Iran
Abstract:   (2285 Views)
In this paper a resonant tunnelling quantum well infrared photodetector (RT-QWIP) is discussed. Each period of this photodetector structure comprises of a resonant tunnelling structure (AlAs/AlGaAs/AlAs) nearby a quantum well (AlGaAs/GaAs). In this photodetector, photocurrent is produced when an electron makes a transition from the ground state of the well to an excited state which is coupled to the resonant state of the resonant tunnelling structure. The effect of structural parameters of the photodetector on the electronic states and oscillator strength of transitions between energy subbands of the structure is investigated. Then using the obtained results, an appropriate structure for the RT-QWIP is determined which exhibits a photoresponse peak at 7.3 μm at 77 K.
Full-Text [PDF 463 kb]   (891 Downloads)    
Type of Study: Research | Subject: Special
Received: 2014/11/7 | Revised: 2015/06/2 | Accepted: 2015/03/18 | Published: 2015/06/2

Add your comments about this article : Your username or Email:
CAPTCHA code

© 2018 All Rights Reserved | International Journal of Optics and Photonics

Designed & Developed by : Yektaweb