International Journal of
Optics and Photonics (IJOP)
Wed, Apr 24, 2024
[Archive]
Volume 15, Issue 2 (Summer-Fall 2021)
IJOP 2021, 15(2): 125-132 |
Back to browse issues page
Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:
Abbasi S P, Hodaei A. Using of Broadened Asymmetric Waveguide Structure for 980nm Diode Laser. IJOP 2021; 15 (2) :125-132
URL: http://ijop.ir/article-1-458-en.html
URL: http://ijop.ir/article-1-458-en.html
1- Semiconductor Laser Group, Iranian National Laser Center (INLC), Tehran, Iran.
Abstract: (2523 Views)
Laser diode beam divergence is the main parameter for beam shaping and fiber optic coupling. Increasing the waveguide layer thickness is the conventional method to decrease the beam divergence. In this paper, the broadened asymmetric waveguide is introduced to decrease the divergence without increasing the optical power. The asymmetric waveguide was used to shift the vertical optical field to n-section, which has lower free carrier loss. The main target in this research is to minimize the internal loss to avoid the disadvantage of the broadened waveguide. Finally the beam divergence was decreased to 35 degrees that is very suitable for the conventional multi-mode optical fiber coupling and the optical power was increased to 2400mW in the laser diode with 100μm stripe width and 1mm cavity length. In addition to the fiber coupling, this improvement can be used for other direct applications that need beam shaping.
Type of Study: Research |
Subject:
Special
Received: 2021/04/29 | Revised: 2021/12/26 | Accepted: 2021/12/28 | Published: 2022/06/22
Received: 2021/04/29 | Revised: 2021/12/26 | Accepted: 2021/12/28 | Published: 2022/06/22
References
1. A. Malag, E. Dabrowska, M. Teodorczyk, G. Sobczak, A. Kozłowska, and J. Kalbarczyk, "Asymmetric Heterostructure with Reduced Distance from Active Region to Heatsink for 810-nm Range High-Power Laser Diodes," IEEE J.Quantum Electron. Vol. 48, No. 4, pp. 465-471, 2012. [DOI:10.1109/JQE.2012.2184741]
2. R. Diehl, High Power Diode Lasers, New York, Springe, Ch. 2, 2000. [DOI:10.1007/3-540-47852-3]
3. B.S. Ryvkin and E.A. Avrutin, "Asymmetric, nonbroadened large optical cavity waveguide structures for high-power long-wavelength semiconductor lasers," J. Appl. Phys. Vol. 97, No. 6, pp. 123103 (1-7), 2005. [DOI:10.1063/1.1928309]
4. B. Mroziewicz, Physics of Semiconductor Lasers, Warszawa, PWN, ch. 5, 1991.
5. N.A. Pikhtin, S.O. Slipchenko, Z.N. Sokolova, and I.S. Tarasov "Internal Optical Loss in Semiconductor Lasers," Semiconductors, Vol. 38, No. 3, pp. 360-367, 2004. [DOI:10.1134/1.1682615]
6. J.J. Lee, L.J. Mawst, and D. Botez, "Improved-performance, InGaAs=InGaAsP (λ=980 nm) asymmetric broad-waveguide diode lasers via waveguide-core doping," Electron. Lett. Vol. 39, No. 17, pp. 1250-1252, 2003. [DOI:10.1049/el:20030830]
7. B.S. Ryvkin, E.A. Avrutin, and J.T. Kostamovaara, "Narrow versus broad asymmetric waveguides for single-mode high-power laser diodes," J. Appl. Phys. Vol. 114, pp. 013104 (1-4), 2013. [DOI:10.1063/1.4812571]
8. B.S. Ryvkin and E.A. Avrutin, "Improvement of differential quantum efficiency and power output by waveguide asymmetry in separate-confinement-structure diode lasers," IEE Proc.-Optoelectron., Vol. 151, No. 4, August 2004. [DOI:10.1049/ip-opt:20040633]
9. B.S. Ryvkin and E.A. Avrutin, "Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes," J. Appl. Phys. Vol. 97, pp. 113106 (1-6), 2005. [DOI:10.1063/1.1929087]
10. K.A. Bulashevich1, V.F. Mymrin, S. Yu Karpov, D.M. Demidov and A.L. Ter-Martirosyan, "Effect of free-carrier absorption on performance of 808 nm AlGaAs-based high-power laser diodes," Semicond. Sci. Technol. Vol. 22, pp. 502-510, 2007. [DOI:10.1088/0268-1242/22/5/008]
11. D. Botez, "High-Power Al-free Coherent and Incoherent Diode Lasers," in Conference Proceedings, LEOS'98, 11th Annual Meeting, 1998. [DOI:10.1117/12.344515]
12. P.G. ELISEEV, "Optical Strength of Semiconductor Laser Materials," Prog. Quant. Electr. Vol. 20, No. I, pp. 1-82, 1996. [DOI:10.1016/0079-6727(95)00002-X]
13. Chin-Lin Chen, Foundations for Guided-Wave Optics, New Jersey, A JOHN WILEY & SONS, INC., Ch. 2, 2007.
14. S. Adachi, Properties of Aluminium Gallium Arsenide, London, INSPEC, the IEEE,1993.
15. E.D. Palik, Handbook of Optical Constants of Solids, London, Academic press, 1998.
| Rights and permissions | |
 |
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License. |
