Volume 13, Issue 2 (International Journal of Optics and Photonics (IJOP) Vol 13, No 2, Summer-Fall 2019)                   IJOP 2019, 13(2): 171-180 | Back to browse issues page

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Zolfaghari M. The Impact of Doping on the Anti-Resonance Effects of A11g Mode of InSe. IJOP. 2019; 13 (2) :171-180
URL: http://ijop.ir/article-1-339-en.html
Department of Physics, University of Sistan and Baluchestan
Abstract:   (793 Views)
A comparative study of anti-resonance effects in InSe and InSe doped with GaS, using the resonant Raman spectroscopy is presented. The nonpolar optical phonon of  symmetry in InSe exhibits a pronounced decrease in the Raman cross-section at excitation energy 2.585 eV. In InSe doped with GaS samples, it is found that the anti-resonance behavior decreases as doping contents are increased. To account these observations, a model is applied to explain and interpret the Raman intensity evolution versus incident photon energy. The agreement between theory and experiment is good.

Full-Text [PDF 441 kb]   (251 Downloads)    
Type of Study: Research | Subject: General
Received: 2018/03/15 | Revised: 2018/05/29 | Accepted: 2018/10/2 | Published: 2019/12/27

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