Volume 3, Issue 1 (International Journal of Optics and Photonics (IJOP) Vol. 3, No. 1, Winter-Spring 2009)                   IJOP 2009, 3(1): 19-26 | Back to browse issues page

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Karimzadeh Esfahani E, Bagheri Harouni M, Roknizadeh R. Quantization of electromagnetic fields in the presence of a spherical semiconductor quantum dot and spontaneous decay of an excited atom doped in this nanostructure. IJOP 2009; 3 (1) :19-26
URL: http://ijop.ir/article-1-211-en.html
Quantization of electromagnetic fields in the presence of a spherical semiconductor quantum dot and spontaneous decay of an excited atom doped in this nanostructure
E. Karimzadeh Esfahani *1 , M. Bagheri Harouni1 , R. Roknizadeh1
1- Quantum Optics Group, Department of Physics, University of Isfahan
Abstract:   (6123 Views)
In this paper we consider electromagnetic field quantization in the presence of a dispersive and absorbing semiconductor quantum dot. By using macroscopic approach and Green's function method, quantization of electromagnetic field is investigated. Interaction of a two-level atom , which is doped in a semiconductor quantum dot, with the quantized field is considered and its spontaneous emission rate is calculated. Comparing with the same condition for an excited atom inside the bulk, it is shown that the spontaneous emission rate of an atom will decrease.
Keywords: Semiconductor Quantum Dot, Quantization, Spontaneous Emission
Full-Text [PDF 119 kb]   (3776 Downloads)    
Type of Study: Research | Subject: General
Received: 2015/03/11 | Accepted: 2015/03/11 | Published: 2015/03/11
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