F. Rahman, J. Podder, M. Ichimura,
Volume 5, Issue 2 (7-2011)
Abstract
Thin films of indium doped zinc sulfide (ZnS) for different indium (In) concentrations (x=0.0 - 0.8) were deposited onto glass substrate by spray pyrolysis method at 523K temperature. Aqueous solution of zinc acetate, indium chloride and thiorea were used to deposit the In-Zn-S film. The deposited thin films were characterized by Energy dispersive X-ray (EDX), Scanning electron microscopy (SEM), X-ray diffraction (XRD), and by UVvisible spectroscopy. The XRD spectra of In-Zn- S revealed both the amorphous and polycrystalline property for different In concentration. The EDX showed a well stoichiometric result of different compositions of In in ZnS thin films. The granularity of irregular shape is observed in In doped ZnS thin films surface by scanning electron microscope. From the absorbance and transmittance data it is observed that the band gap energy is decreased from 3.75eV to 3.1eV with the increase of In concentration in ZnS.
