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Showing 3 results for Pulsed Laser Deposition

S. M Hamidi, M. M Tehranchi,
Volume 5, Issue 1 (1-2011)
Abstract

We report an experimental study on optical and magneto-optical properties of Cesubstituted yttrium iron garnet thin films incorporating gold nanoparticles. Au nanoparticles were formed by heating Au thin film on cubic quartz and garnet substrate in vacuum chamber and a Ce:YIG layer was deposited on them by the aid of Pulsed laser deposition method. A large enhancement of the longitudinal Kerr effect was obtained in sample with Au nanoparticles on quartz substrate and the effect of substrate material on improving optical and magneto-optical response of samples were investigated.
Seyed Mohammad Hosein Khalkhali, Dr. Mohammad Mehdi Tehranchi, Dr. Seyedeh Mehri Hamidi,
Volume 10, Issue 1 (4-2016)
Abstract

We examine the photo-assisted polarization loop in a BiFeO3 thin film under UV light illumination. BiFeO3 thin film prepared by pulsed laser deposition method onto the BaTiO3 thin film and the polarization behavior has been measured under poling voltage. Our results show the engineered polarization due to controllable schottky barrier under inverse poling voltage. This control on schottky barrier height and then polarization of thin film can be opened the new insight in the ferroelectric devices.


Iman Rahmani, Majid Ghanaatshoar,
Volume 16, Issue 2 (7-2022)
Abstract

ta charset="UTF-8" >We investigate the Cu2FeSnS4 (CFTS) thin film. The raw materials of this thin film are copper, iron and tin, which are mixed in the form of tablets and then are deposited on a glass substrate through the process of pulsed laser deposition (PLD). The produced metallic thin films are then sulfurized to carry out the process of merging the element sulfur in the thin films and forming CFTS structure. We investigate the influence of sulfurization temperature and the laser pulse energy in the PLD process on the deposited CFTS thin films. The X-ray diffraction (XRD), Raman and UV-Vis analyses’ results show that by decrease in sulfurization temperature from 600 °C to 550 °C the crystal quality of the thin films is improved, which is realized by increase in volume and quality of the CFTS phase. On the other hand, the results confirm that the laser fluence is a decisive factor which should be taken into account to achieve an optimized structure.

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