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Showing 2 results for External Cavity

Alireza Khorsandi, Maryam Maleki,
Volume 7, Issue 1 (6-2013)
Abstract

In this research, tunability of a commercial diode laser has extended to about more than ± 11 nm using a V-shaped external-cavity fabricated around the laser. Although under normal condition it can be tuned up to about ± 4 nm just by changing its temperature and injection current. Such modified diode laser has then used in a difference-frequency generation (DFG) experimental setup as pump source in order to continuous tuning of the generated DFG spectrum up to about ± 100 nm from 4.76 m to 4.85 m in the mid-infrared region. An AgGaS2 crystal is used as nonlinear medium.
Akbar Jafari, Khosro Mabhouti, Maryam Heydari Heydarabad,
Volume 8, Issue 1 (1-2014)
Abstract

In this paper, considering optical feedback as an optical injection, and taking in to account round-trip time role in the external cavity, a standard small signal analysis is applied on laser rate equations. By considering the relaxation oscillation (f2) and external cavity frequencies (f) ratio for semiconductor laser, field amplitude response gain, optical phase and carrier number for long external cavities (LEC) and short external cavities (SEC) are obtained. Laser output intensity and resonance peak dynamics have been shown by bifurcation diagrams. Furthermore, the effects of some control parameters, such as enhancement factor, pumping current and feedback strength, on response gain have been discussed in short and long external cavities. As a result, in optical injection, for SEC, compared to LEC, more varied dynamics are observed. Also, higher values of the response gain peak in SEC, in comparison with LEC, make SEC to be affected more by the injected beam. SEC provides greater bandwidth, and also better performance in the range of compared to LEC.

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