International Journal of

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In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which decline high temperature performance of these devices. Temperature dependent behavior of the responsivity and dark current were presented and discussed for different applied electric fields. Specific detectivity used as figure of merit, and its peak was calculated in different temperatures. This paper indicates the state of the art in the use of the novel III-N materials in infrared detectors, with their special properties such as spontaneous and piezoelectric polarizations. It was found that, III- nitride Quantum dots have a good potential to depress the thermal effects in the dark current which yields the specific detectivity up to~ 2107 CmHz 1/ 2/W at room temperature.

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In this paper, we perform a detailed study of the spectral response of the gold U-shaped nano-structures for different geometrical parameters and polarizations in order to obtain significant localization factor in the wavelength 1.55 μm. The obtained near-field distribution of electric fields reveals that resonances in these nano-structures correspond to the even and odd plasmonic modes depending on the geometrical parameters and polarization directions. Considerably large localization factor is obtained for the first odd mode in specific geometrical parameters. Then, this structure is considered to be surrounded by a typical second-order nonlinear dielectric. The effective susceptibility is calculated for the considered structure, using the nonlinear retrieval method, to demonstrate the enhanced second-harmonic generation quantitatively.   In order to represent the applicability of the investigated structure in nano-scale light sources and frequency doublers, its second harmonic generation efficiency is compared with the efficiency of the nonlinear dielectric alone with the same dimensions.

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In this article, the temperature behavior of output power of superluminescent light-emitting diode (SLED) by considering the effect of non-radiative recombination coefficient, non-radiative spontaneous emission coefficient and Auger recombination coefficients has been investigated. For this aim, GaN pyramidal quantum dots were used as the active region. The numerical method has been used to solve three-dimensional Schrodinger equations and traveling-wave equations. The spectral width of the gain spectrum in each case has been investigated. Eliminating the non-radiative recombination, non-radiative spontaneous emission coefficient and Auger recombination coefficients increased the output power of SLED and in some cases reduced the negative effect of temperature increase on output power.

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Efforts to understand genetic diseases and mutations in biological systems are the most important driver of research development in medical and biomolecular sciences. Rapid, sensitive, accurate, and cost-effective biomolecule analysis is particularly important in diagnosis and treatment. The discovery of graphene as a new nanomaterial with a carbon structure with a single atom thickness due to its unique electronic, mechanical, thermal, and optical properties has opened a new topic in research in various biomedical sciences and the production of biosensors for biomolecule analysis. In this research, a biosensor based on a graphene field-effect transistor (GFET) is used to detect DNA with optimal accuracy and sensitivity, which can be a basis for making DNA detection tools. In the studied structure, using non-equilibrium Green function equations and Poisson equation, we study the electron transfer in graphene field-effect transistors. Then, by examining the interaction between nucleotide bases (C, G, A, T) and O6-carboxymethylguanine related to the colorectal cancer DNA sequence to detection of mutation will be identified by GFET, and their binding energy determined.