International Journal of

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Thin films of indium doped zinc sulfide (ZnS) for different indium (In) concentrations (x=0.0 - 0.8) were deposited onto glass substrate by spray pyrolysis method at 523K temperature. Aqueous solution of zinc acetate, indium chloride and thiorea were used to deposit the In-Zn-S film. The deposited thin films were characterized by Energy dispersive X-ray (EDX), Scanning electron microscopy (SEM), X-ray diffraction (XRD), and by UVvisible spectroscopy. The XRD spectra of In-Zn- S revealed both the amorphous and polycrystalline property for different In concentration. The EDX showed a well stoichiometric result of different compositions of In in ZnS thin films. The granularity of irregular shape is observed in In doped ZnS thin films surface by scanning electron microscope. From the absorbance and transmittance data it is observed that the band gap energy is decreased from 3.75eV to 3.1eV with the increase of In concentration in ZnS.

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Zinc Sulfide (ZnS) thin films were deposited on glass substrates at the pressure of 10-6 mbar by thermal resistor evaporation technique. The effects of annealing on the structural, optical properties of ZnS films were studied. Crystalline ZnS films have been analyzed by X-ray diffraction. Only cubic phase with the preferred (111) plane was found in ZnS films. Optical characteristics were studied as a function of annealing temperature and thickness in air. The results show that the energy band gap was found to be about 3.5 eV. It was observed that the energy gap decreases with the increase in the film thickness and increases with the increase in the annealing temperature.

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We examine the photo-assisted polarization loop in a BiFeO₃ thin film under UV light illumination. BiFeO₃ thin film prepared by pulsed laser deposition method onto the BaTiO₃ thin film and the polarization behavior has been measured under poling voltage. Our results show the engineered polarization due to controllable schottky barrier under inverse poling voltage. This control on schottky barrier height and then polarization of thin film can be opened the new insight in the ferroelectric devices.

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Silver nanowires are the favorable material in many applications based on their plasmonic double resonance in the visible region. In this paper, thin films of Poly-vinyl-pyrrolidone (PVP) doped with Silver nanowires (Ag NWs) in different concentrations have been prepared. The plasmonic imaging system using a high numerical aperture objective lens excite the Surface Plasmon in these structures. The hot spot results from reflected light intensity of surface plasmon resonance (SPR) proved that increasing of concentration of Silver nanowires yields to get better hot spot in plasmonic imaging systems by choosing the appropriate wavelength. These obtained results accompanying with third order nonlinear investigations show the ability of samples usage in thermoplasmonic applications.

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In this paper, the optical properties of laterally oriented core-shell nanowire silicon solar cells (NWSCs) are optimized. The optimum structure consists of an array with non-uniform hexagonal nanowires (NWs). Each NW is constructed from an amorphous silicon layer sandwiched between two crystalline silicon layers. In order to improve the light absorption and short circuit current density (J_sc) of NWSC, a particle swarm optimization (PSO) algorithm is used to optimize the geometrical parameters of NWs. It is shown that the optimized structure has advantageous performance in terms of light absorption and J_sc. Finally, a multiple structure composed of two NWs with different morphologies and the optimized dimensions is proposed to utilize NWSCs better.