Showing 3 results for Semiconductor Laser
G. Tissoni, I. Protsenkob, R. Kheradmand, F. Prati, M. Brambilla, A. Lugiato,
Volume 1, Issue 1 (6-2007)
Abstract
CSs have been theoretically predicted and recently experimentally demonstrated in broad area, vertical cavity driven semiconductor lasers (VCSELs) slightly below the lasing threshold. Above threshold, the simple adiabatic elimination of the polarization variable is not correct, leading to oscillatory instabilities with a spuriously high critical wave-number. To achieve real insight on the complete dynamical problem, we study here the complete system of equations and find regimes where a Hopf instability, typical of lasers above threshold, affects the lower intensity branch of the homogeneous steady state, while the higher intensity branch is unstable due to a Turing instability. Numerical results obtained by direct integration of the dynamical equations show that writable/erasable CSs are possible in this regime, sitting on unstable background
Akbar Jafari, Khosro Mabhouti, Maryam Heydari Heydarabad,
Volume 8, Issue 1 (1-2014)
Abstract
In this paper, considering optical feedback as an optical injection, and taking in to account round-trip time role in the external cavity, a standard small signal analysis is applied on laser rate equations. By considering the relaxation oscillation (f2) and external cavity frequencies (f) ratio for semiconductor laser, field amplitude response gain, optical phase and carrier number for long external cavities (LEC) and short external cavities (SEC) are obtained. Laser output intensity and resonance peak dynamics have been shown by bifurcation diagrams. Furthermore, the effects of some control parameters, such as enhancement factor, pumping current and feedback strength, on response gain have been discussed in short and long external cavities. As a result, in optical injection, for SEC, compared to LEC, more varied dynamics are observed. Also, higher values of the response gain peak in SEC, in comparison with LEC, make SEC to be affected more by the injected beam. SEC provides greater bandwidth, and also better performance in the range of compared to LEC.
Erfan Abbaszadeh Jabal Kandi, Khosro Mabhouti, Rahim Naderali, Neda Samadzadeh,
Volume 17, Issue 1 (1-2023)
Abstract
In this article, the conditions of pulse production in two mutually coupled lasers are studied. Based on the obtained characteristic equation and its roots, the dynamical behavior of the system and the threshold of the instability are analyzed. For the stable operation of the system and with the use of the time series curves, it is possible to study the dynamical behavior and the stability ranges of the laser in the presence of the saturable absorber and the gain environment. This paper aims to achieve from quasi-periodic behavior in a solitary laser to the generation of a pulse train from two mutually coupled lasers in the presence of saturable absorbers. Also, the stability range for a solitary laser and then for two coupled lasers in the presence of saturable absorbers have been studied.
