Showing 4 results for Quantum Well
Ashkan Horri, Rahim Faez,
Volume 6, Issue 2 (10-2012)
Abstract
In this paper, transistor lasers (TLs) are used as an optical modulator for generation of ASK(Amplitude Shift Keying) and FSK (Frequency Shift Keying) optical signals. Our analysis is based on continuity equation, rate equations, and the theory of discontinuity of quasi-fermi level at the abrupt junction. Our simulation results indicate that, the specification of ASK and FSK optical signals, are affected by dynamical behavior of TL. Also our simulation results indicate that, the collector-emitter voltage amplitude should be small enough that the nonlinear properties of TLs do not destroy the modulated optical signals.
Rasoul Roknizadeh, Malek Bagheri Harouni,
Volume 7, Issue 1 (6-2013)
Abstract
We consider the interaction of quantum light with an ideal semiconductor microcavity. We investigate photon statistics in different conditions and the presence of detuning and exciton-exciton interaction. We show that in the resonant interaction and absence of the exciton-exciton interaction, the state of the whole system can be considered as coherent state. According to our results, it turns out that photon statistics strongly depends on the initial state of the system. It is found that it is possible to generate squeezed light in the presence of the exciton-exciton interaction.
Mr. Reza Masoudian Saadabad, Dr. Naser Hatefi-Kargan,
Volume 9, Issue 1 (1-2015)
Abstract
In this paper a resonant tunnelling quantum well infrared photodetector (RT-QWIP) is discussed. Each period of this photodetector structure comprises of a resonant tunnelling structure (AlAs/AlGaAs/AlAs) nearby a quantum well (AlGaAs/GaAs). In this photodetector, photocurrent is produced when an electron makes a transition from the ground state of the well to an excited state which is coupled to the resonant state of the resonant tunnelling structure. The effect of structural parameters of the photodetector on the electronic states and oscillator strength of transitions between energy subbands of the structure is investigated. Then using the obtained results, an appropriate structure for the RT-QWIP is determined which exhibits a photoresponse peak at 7.3 μm at 77 K.
Zahra Danesh Kaftroudi, Abolfazl Mzandarani,
Volume 13, Issue 1 (1-2019)
Abstract
In this paper, a numerical study of barrier characterization effects on the high-temperature internal performance of an InGaAsP multi-quantum well laser is presented. The softwareused for this purpose self-consistently combines the three-dimensional simulation of carrier transports, self-heating, and optical waveguiding. The laser model calculates all relevant physical mechanisms, including their dependence on temperature and local carrier density. The results have shown that the proposed laser, which operates at 1325 nm, suffers from electron leakage. The electron leakage current decreases by reducing the barrier thickness. Although tensile strain barriers lead to improved laser optical behavior, it increases leakage current because of electron non-uniformity.
