دوره ۱۳، شماره ۲ - ( ۹-۱۳۹۸ )
جلد ۱۳ شماره ۲ صفحات ۱۸۰-۱۷۱ |
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Zolfaghari M. The Impact of Doping on the Anti-Resonance Effects of A11g Mode of InSe. IJOP 2019; 13 (2) :171-180
URL: http://ijop.ir/article-1-339-fa.html
URL: http://ijop.ir/article-1-339-fa.html
The Impact of Doping on the Anti-Resonance Effects of A۱۱g Mode of InSe. . ۱۳۹۸; ۱۳ (۲) :۱۷۱-۱۸۰
چکیده: (۴۶۴۱ مشاهده)
A comparative study of anti-resonance effects in InSe and InSe doped with GaS, using the resonant Raman spectroscopy is presented. The nonpolar optical phonon of 
symmetry in InSe exhibits a pronounced decrease in the Raman cross-section at excitation energy 2.585 eV. In InSe doped with GaS samples, it is found that the anti-resonance behavior decreases as doping contents are increased. To account these observations, a model is applied to explain and interpret the Raman intensity evolution versus incident photon energy. The agreement between theory and experiment is good.
symmetry in InSe exhibits a pronounced decrease in the Raman cross-section at excitation energy 2.585 eV. In InSe doped with GaS samples, it is found that the anti-resonance behavior decreases as doping contents are increased. To account these observations, a model is applied to explain and interpret the Raman intensity evolution versus incident photon energy. The agreement between theory and experiment is good.
نوع مطالعه: پژوهشي |
موضوع مقاله:
عمومى
دریافت: 1396/12/24 | ویرایش نهایی: 1397/3/8 | پذیرش: 1397/7/10 | انتشار: 1398/10/6
دریافت: 1396/12/24 | ویرایش نهایی: 1397/3/8 | پذیرش: 1397/7/10 | انتشار: 1398/10/6
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