en عمومى General پژوهشي Research Thin films of indium doped zinc sulfide (ZnS) for different indium (In) concentrations (x=0.0 - 0.8) were deposited onto glass substrate by spray pyrolysis method at 523K temperature. Aqueous solution of zinc acetate, indium chloride and thiorea were used to deposit the In-Zn-S film. The deposited thin films were characterized by Energy dispersive X-ray (EDX), Scanning electron microscopy (SEM), X-ray diffraction (XRD), and by UVvisible spectroscopy. The XRD spectra of In-Zn- S revealed both the amorphous and polycrystalline property for different In concentration. The EDX showed a well stoichiometric result of different compositions of In in ZnS thin films. The granularity of irregular shape is observed in In doped ZnS thin films surface by scanning electron microscope. From the absorbance and transmittance data it is observed that the band gap energy is decreased from 3.75eV to 3.1eV with the increase of In concentration in ZnS. Spray pyrolysis, In-Zn-S, Thin films, EDX, SEM, Optical properties, Band gap. 79 86 http://ijop.ir/browse.php?a_code=A-10-185-1&slc_lang=en&sid=1 F. Rahman 10031947532846001129 10031947532846001129 No Department of Physics, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh J. Podder jpodder@phy.buet.ac.bd 10031947532846001130 10031947532846001130 Yes Department of Physics, Bangladesh University of Engineering and Technology, Dhaka-1000, Bangladesh M. Ichimura 10031947532846001131 10031947532846001131 No Department of Electrical and Electronic Engineering, Nagoya Institute of Technology, Nagoya-466-8555, Japan