en عمومى General پژوهشي Research A comparative study of anti-resonance effects in InSe and InSe doped with GaS, using the resonant Raman spectroscopy is presented. The nonpolar optical phonon of <strong><img alt="" height="24" src="data:image/png;base64,R0lGODlhHwAYAHcAMSH+GlNvZnR3YXJlOiBNaWNyb3NvZnQgT2ZmaWNlACH5BAEAAAAALAIAAwAaABIAhAAAAAAAAAgDAAAABAoLDQgDBA0IBAAAAwgKDQoEAA0LCwMGCw0LCgQABAQEAAADCAsLDQsGAwgDAwQAAAAECgQIDQ0KCAMAAAoEAwMABA0ICggGCgECAwECAwECAwECAwV8ICCO5KgIA1GubKkUaiu78GyLb3wbB7LmN1EisPjVboyG4wEpDZm3yILnC/4kCMakaC0ZKMKUC6VjJSoiQwBNK5csl4BcDm6LtHSRlJQQk4AABkUYPhYZZXBcJkcATxBwAT0ikAFQOEcGbF1ClU2UdZsjGioKG6EkEXI9IQA7" width="31" ></strong>&nbsp;symmetry in InSe exhibits a pronounced decrease in the Raman cross-section at excitation energy 2.585 eV. In InSe doped with GaS samples, it is found that the anti-resonance behavior decreases as doping contents are increased. To account these observations, a model is applied to explain and interpret the Raman intensity evolution versus incident photon energy. The agreement between theory and experiment is good.<br> <br> &nbsp; Anti-resonance, InSe, GaS, Raman scattering 171 180 http://ijop.ir/browse.php?a_code=A-10-610-1&slc_lang=en&sid=1 Mahmoud Zolfaghari mzolfaghari@phys.usb.ac.ir 10031947532846002687 10031947532846002687 Yes Department of Physics, University of Sistan and Baluchestan