International Journal of Optics and Photonics
IJOP
Basic Sciences
http://ijop.ir
1
admin
1735-8590
2538-4007
10.52547/ijop
1735-8590
en
jalali
1394
8
1
gregorian
2015
11
1
9
2
online
1
fulltext
en
Theoretical Investigation of Doping Concentration in Silicon Semiconductor Using Optical Principle
عمومى
General
پژوهشي
Research
<p dir="ltr" style="text-align: justify">This paper investigates the amount of doping concentration in silicon semiconductor using optical principle. Both donor and acceptor impurities of n type and p-type silicon semiconductor materials are computed at wavelength of 1550 nm. During the computation of donor and acceptor impurities, both reflection and absorption losses are considered. Theoretical result showed that transmitted intensity through both n-type and p-type silicon structure increases with respect to doping concentration (10<sup>15</sup> cm<sup>-3</sup> to 10<sup>21</sup> cm<sup>-3</sup>). It is also seen that transmitted intensity increases slowly up to 10<sup>20</sup> cm<sup>-3</sup> and then increases rapidly with the increase of doping concentration. Finally an experimental set up is proposed to estimate the doping concentration in silicon semiconductor.</p>
doping concentration, silicon semiconductor, Reflectance, transmitted intensity
93
98
http://ijop.ir/browse.php?a_code=A-10-443-1&slc_lang=en&sid=1
Millan
Sahoo
kumarmilan.sahoo@gmail.com
10031947532846001352
10031947532846001352
No
Government Polytechnic Sambalpur
Gopinath
Palai
gpalai28@gmail.com
10031947532846001353
10031947532846001353
Yes
GITA