دوره 16، شماره 1 - ( 10-1400 )                   جلد 16 شماره 1 صفحات 106-99 | برگشت به فهرست نسخه ها


XML Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Nejatipour R, Dadsetani M. Effects of Silicon Impurity on Optical Properties of Sc2C(OH)2 Monolayer: A DFT Study. IJOP 2022; 16 (1) :99-106
URL: http://ijop.ir/article-1-508-fa.html
Effects of Silicon Impurity on Optical Properties of Sc2C(OH)2 Monolayer: A DFT Study. . 1400; 16 (1) :99-106

URL: http://ijop.ir/article-1-508-fa.html


چکیده:   (1166 مشاهده)
In the density functional theory (DFT), optical properties of Sc2C(OH)2 monolayer are studied with and without silicon impurity. In the presence of silicon impurity, the structure and properties of this compound were changed from a semiconductor with a 0.57 eV band-gap to a topological insulator with a zero band-gap and a band inversion. With and without the silicon impurity, the spectral features in this compound originate from the electron transition from the p-Si and p-C to d-Sc and s-H, respectively. The values of optical constants are increased in the doped-structure with respect to the pure structure.
     
نوع مطالعه: پژوهشي | موضوع مقاله: مواد اپتیکی و فرامواد
دریافت: 1401/6/16 | ویرایش نهایی: 1401/8/24 | پذیرش: 1401/9/5 | انتشار: 1401/10/2

ارسال نظر درباره این مقاله : نام کاربری یا پست الکترونیک شما:
CAPTCHA

بازنشر اطلاعات
Creative Commons License این مقاله تحت شرایط Creative Commons Attribution-NonCommercial 4.0 International License قابل بازنشر است.

کلیه حقوق این وب سایت متعلق به می باشد.

طراحی و برنامه نویسی : یکتاوب افزار شرق

© 2024 CC BY-NC 4.0 | International Journal of Optics and Photonics

Designed & Developed by : Yektaweb