دوره 14، شماره 2 - ( 9-1399 )                   جلد 14 شماره 2 صفحات 194-187 | برگشت به فهرست نسخه ها


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Barua B. Design of a Low Index Silicon Micro Ring Resonators. IJOP. 2020; 14 (2) :187-194
URL: http://ijop.ir/article-1-407-fa.html
Design of a Low Index Silicon Micro Ring Resonators. . 1399; 14 (2) :194-187

URL: http://ijop.ir/article-1-407-fa.html


چکیده:   (551 مشاهده)
Optical resonators where light will circulate in two opposite directions independently. Usually, the two distinct topologies of optical resonators are Linear and Ring. Two end mirrors with perpendicular light incidence have linear resonators (standing-wave resonators). In the other hand, there are no end mirrors in ring resonators; none of the resonator mirrors reflects light back into itself. Given its versatility and cost-effectiveness, it is beneficial to provide a low index ring resonator. Compared with existing high index technologies it can provide an attractive solution. The refractive index difference plays a key role in evaluating the properties of an optical dielectric waveguide, and a higher index contrast allows for shifting to greater integration scales and accessibility to new technologies and interfaces. However high contrast waveguides are harder to realize and more important, that their use does not raise any severe impediments. The intent of this article is to evaluate the impact of the waveguide features with regard to the correlation of the index and to investigate the complexities. This paper evaluates the influence of the index contrast on dielectric waveguide characteristics such as single mode system, losses, technical constraints, and available materials. Evaluation is developed by utilizing Rsoft CAD, known as BeamProp software, for ring resonators (single, double or triple optical loop). The main objective of this contribution is to achieve maximum flexibility and more productivity from the proposed design. This paper is an analogy for the design of optical waveguides, so that we can achieve flexibility by lowering the silicon index.
     
نوع مطالعه: پژوهشي | موضوع مقاله: عمومى
دریافت: 1399/2/10 | ویرایش نهایی: 1399/9/30 | پذیرش: 1399/10/25 | انتشار: 1400/2/30

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