TY - JOUR JF - ijop JO - IJOP VL - 9 IS - 1 PY - 2015 Y1 - 2015/1/01 TI - Optimization of Annealing Process for Totally Printable High-current Superstrate CuInS2 Thin-Film Solar Cells TT - N2 - Planar superstrate CuInS2 (CIS) solar cell devices are fabricated using totally solution-processed deposition methods. A titanium dioxide blocking layer and an In2S3 buffer layer are deposited by the spray pyrolysis method. A CIS2 absorber layer is deposited by the spin coating method using CIS ink prepared by a 1-butylamine solvent-based solution at room temperature. To obtain optimum annealing temperature, these layers are first annealed at 150°C and then annealed at 210°C, 250°C and 350°C respectively. The optimum annealing temperature of the layer is found to be 250°C, where 23 mA current density and 505 mV open circuit voltage are measured for the best fabricated solar cell sample. SP - 53 EP - 61 AU - Behjat, Abbas AU - Dehghani, Mehdi AU - Tajabadi, Fariba AU - Taghavinia, Nima AD - Yazd University KW - CuInS2 KW - Thin film solar cells KW - Superstrate structure KW - Solution-processed deposition method UR - http://ijop.ir/article-1-195-en.html ER -