دوره 4، شماره 2 - ( 3-1389 )                   جلد 4 شماره 2 صفحات 69-76 | برگشت به فهرست نسخه ها

XML Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Gaur A, Sharma D, Gaur P, Malik B, Singh N. Photoexcited Carrier Lifetime and Refractive Nonlinearity in Direct and Indirect Band Gap Crystals on the Z-Scan Technique. IJOP. 2010; 4 (2) :69-76
URL: http://ijop.ir/article-1-207-fa.html
Photoexcited Carrier Lifetime and Refractive Nonlinearity in Direct and Indirect Band Gap Crystals on the Z-Scan Technique. نشریه انجمن اپتیک و فوتونیک ایران. 1389; 4 (2) :69-76

URL: http://ijop.ir/article-1-207-fa.html


چکیده:   (1810 مشاهده)
The Photoexcited carrier lifetime (τ) and peak to valley transmission difference (ΔTp-v) in direct and indirect band gap crystals has been investigated by the use of single beam open and closed aperture z-scan technique using frequency doubled Nd:YAG laser. The peak to valley transmission difference (ΔTp-v) is found to be of the order of 10-2 in case of direct band gap crystals and of the order of 10-3 in case of indirect band gap crystals. The carrier life time (τ) is found to be in nanoseconds range in case of direct band gap crystals and picoseconds range in case of indirect band gap crystals. Lower value of (τ) and (ΔTp-v) in case of indirect band gap crystals can be attributed to the reduction in the value of carrier density (N) and small value of nonlinear phase shift ( Δϕ ),respectively.
متن کامل [PDF 846 kb]   (845 دریافت)    
نوع مطالعه: پژوهشي | موضوع مقاله: عمومى
دریافت: ۱۳۹۳/۱۲/۱۹ | ویرایش نهایی: ۱۳۹۳/۱۲/۱۹ | پذیرش: ۱۳۹۳/۱۲/۱۹ | انتشار: ۱۳۹۳/۱۲/۱۹

ارسال نظر درباره این مقاله : نام کاربری یا پست الکترونیک شما:
CAPTCHA code

کلیه حقوق این وب سایت متعلق به نشریه انجمن اپتیک و فوتونیک ایران می باشد.

طراحی و برنامه نویسی : یکتاوب افزار شرق

© 2018 All Rights Reserved | International Journal of Optics and Photonics

Designed & Developed by : Yektaweb