دوره 9، شماره 1 - ( 10-1393 )
جلد 9 شماره 1 صفحات 61-53 |
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Behjat A, Dehghani M, Tajabadi F, Taghavinia N. Optimization of Annealing Process for Totally Printable High-current Superstrate CuInS2 Thin-Film Solar Cells. IJOP 2015; 9 (1) :53-61
URL: http://ijop.ir/article-1-195-fa.html
URL: http://ijop.ir/article-1-195-fa.html
Optimization of Annealing Process for Totally Printable High-current Superstrate CuInS2 Thin-Film Solar Cells. . 1393; 9 (1) :53-61
چکیده: (6546 مشاهده)
Planar superstrate CuInS2 (CIS) solar cell devices are fabricated using totally solution-processed deposition methods. A titanium dioxide blocking layer and an In2S3 buffer layer are deposited by the spray pyrolysis method. A CIS2 absorber layer is deposited by the spin coating method using CIS ink prepared by a 1-butylamine solvent-based solution at room temperature. To obtain optimum annealing temperature, these layers are first annealed at 150°C and then annealed at 210°C, 250°C and 350°C respectively. The optimum annealing temperature of the layer is found to be 250°C, where 23 mA current density and 505 mV open circuit voltage are measured for the best fabricated solar cell sample.
نوع مطالعه: پژوهشي |
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دریافت: 1393/9/16 | ویرایش نهایی: 1394/3/12 | پذیرش: 1394/2/13 | انتشار: 1394/3/12
دریافت: 1393/9/16 | ویرایش نهایی: 1394/3/12 | پذیرش: 1394/2/13 | انتشار: 1394/3/12
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